the 20- nm of the map of memory from Samsung Tweet

The company Of samsung reported the completion of development of pays MLC NAND of the [flesh]- memory, executed on the 20- nm to technological process. This development will be used in the maps of the memory of SD- size and it will allow company to enlarge the assortment of the [flesh]- accumulators Of samsung with the capacity to 32 GB, utilized in [smartfonakh], electronic devices and highly productive maps of memory.

[Chipsety] MLC NAND of [flesh]- memory, executed on the 20- nm to technological process, they possess productivity on 50% larger, than the contemporary solutions by the 30- nm to technological process. Productivity during the record on the 20- nm the map of memory, with capacity 8 GB and increased density to 30% is more rapid than in the 30- nm of map. This made it possible to raise class on the speed to the tenth (speed of reading 20 [MB]/[s] and recording speed to 10 [MB]/[s]). Also it is reported that with the application of the new technology grew safety level.

The production of products on the basis 20- nm MLC NAND of [flesh]- memory it is planned to begin in this year. Accumulators will be let out by capacity from 4 to 64 GB.

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